Infineon IPD60R600P7SAUMA1 600V 60A CoolMOS Power Transistor

Release date:2025-10-31 Number of clicks:97

Infineon IPD60R600P7SAUMA1: A High-Performance 600V 60A CoolMOS Power Transistor

The Infineon IPD60R600P7SAUMA1 represents a significant advancement in power semiconductor technology, delivering exceptional efficiency and reliability for high-power applications. As part of Infineon’s renowned CoolMOS™ P7 series, this transistor is engineered to meet the growing demands of modern power systems, including switched-mode power supplies (SMPS), industrial motor drives, renewable energy inverters, and electric vehicle charging infrastructure.

With a robust 600V voltage rating and a continuous drain current capability of 60A, the IPD60R600P7SAUMA1 is designed to handle high-power transitions with minimal losses. Its standout feature is the superjunction technology, which drastically reduces on-state resistance (\(R_{DS(on)}\)) to just 60 mΩ, leading to lower conduction losses and improved thermal performance. This allows systems to operate at higher frequencies and power densities while maintaining cooler operation—a critical advantage in space-constrained and thermally sensitive environments.

The transistor also excels in switching performance, thanks to its low gate charge (\(Q_g\)) and optimized internal capacitance. These characteristics ensure faster switching speeds, which contribute to reduced switching losses and enhanced overall system efficiency. Additionally, the device offers strong avalanche ruggedness and excellent body diode reverse recovery behavior, providing increased durability under harsh operating conditions such as overvoltage transients or inductive load switching.

Packaged in a TO-220 FullPAK, the IPD60R600P7SAUMA1 combines mechanical robustness with effective thermal dissipation. The full plastic package ensures full isolation, simplifying mounting and heat sink assembly while meeting international safety standards.

In summary, the Infineon IPD60R600P7SAUMA1 sets a new benchmark for high-power MOSFETs by combining high current handling, low losses, and superior thermal management. Its performance makes it an ideal choice for next-generation high-efficiency power conversion systems.

ICGOOODFIND

The Infineon IPD60R600P7SAUMA1 stands out for its high current capacity, ultra-low \(R_{DS(on)}\), and excellent switching characteristics, making it a top-tier solution for demanding power electronics applications.

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Keywords:

CoolMOS™ P7, Superjunction Technology, Low \(R_{DS(on)}\), High Switching Performance, TO-220 FullPAK

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